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The precise positioning of dopants in semiconductors using scanning tunnelingmicroscopes has led to the development of planar dopant-based devices, alsoknown as $\delta$-layers, facilitating the exploration of new concepts inclassical and quantum computing. Recently it have been shown that two distinctconductivity regimes (low- and high- bias regimes) exist in $\delta$-layertunnel junctions due to the presence of quasi-discrete and continuous states inthe conduction band of $\delta$-layer systems. Furthermore, discrete chargedimpurities in the tunnel junction region significantly influence the tunnelingrates in $\delta$-layer tunnel junctions. Here we demonstrate that zero-chargeimpurities, or electrical dipoles, present in the tunnel junction region canalso significantly alter the tunneling rate, depending, however, on thespecific conductivity regime and orientation and moment of the dipole. In thelow-bias regime with high-resistance tunneling mode dipole impurities of nearlyall orientations and moments can alter the current, indicating the extremesensitivity of the tunnel current to the slightest imperfection in the tunnelgap. In the high-bias regime with low-resistivity only dipole defects with highmoment and orientated in the direction perpendicular to the electron tunnelingdirection can significantly affect the current, thus making this conductivityregime significantly less prone to the influence of dipole defects withlow-moment or dipoles oriented along the propagation direction.

Uncovering anisotropic effects of electric high-moment dipoles on the tunneling current in $\delta$-layer tunnel junctions