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High bandwidth, low voltage electro-optic modulators with high optical powerhandling capability are important for improving the performance of analogoptical communications and RF photonic links. Here we designed and fabricated athin-film lithium niobate (LN) Mach-Zehnder modulator (MZM) which can handlehigh optical power of 110 mW, while having 3-dB bandwidth greater than 110 GHzat 1550 nm. The design does not require etching of thin-film LN, and useshybrid optical modes formed by bonding LN to planarized silicon photonicwaveguide circuits. A high optical power handling capability in the MZM wasachieved by carefully tapering the underlying Si waveguide to reduce the impactof optically-generated carriers, while retaining a high modulation efficiency.The MZM has a $V_\pi L$ product of 3.1 V$.$cm and an on-chip optical insertionloss of 1.8 dB.

110 GHz, 110 mW Hybrid Silicon-Lithium Niobate Mach-Zehnder Modulator