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Here, various synaptic functions and neural network simulation based pattern-recognition using novel, solution-processed organic memtransistors ( mem Ts) with an unconventional redox-gating mechanism are demonstrated. Our synaptic  mem T device using conjugated polymer thin-film and redox-active solid electrolyte as the gate dielectric can be routinely operated at gate voltages ( V  GS ) below − 1.5 V, subthreshold-swings ( S ) smaller than 120 mV/dec, and ON/OFF current ratio larger than 10 8 . Large hysteresis in transfer curves depicts the signature of non-volatile resistive switching (RS) property with ON/OFF ratio as high as 10 5 . In addition, our  memT  device also shows many synaptic functions, including the availability of many conducting-states (&gt; 500) that are used for efficient pattern recognition using the simplest neural network simulation model with training and test accuracy higher than 90%. Overall, the presented approach opens a new and promising way to fabricate high-performance artificial synapses and their arrays for the implementation of hardware-oriented neural network.

Emulation of synaptic functions with low voltage organic memtransistor for hardware oriented neuromorphic computing