English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Spin-orbit torque (SOT) magnetization switching of ferromagnets with largeperpendicular magnetic anisotropy has a great potential for the next-generationnon-volatile magnetoresistive random-access memory (MRAM). It requires ahigh-performance pure spin current source with a large spin Hall angle and highelectrical conductivity, which can be fabricated by a mass productiontechnique. In this work, we demonstrate ultrahigh efficient and robust SOTmagnetization switching in all-sputtered BiSb topological insulator -perpendicularly magnetized Co/Pt multilayers. Despite fabricated by theindustry-friendly magnetron sputtering instead of the laboratory molecular beamepitaxy, the topological insulator layer, BiSb, shows a large spin Hall angleof $\theta$$_{SH}$ = 12.3 and high electrical conductivity of $\sigma$ =1.5x$10^5$ $\Omega^{-1}$m$^{-1}$. Our results demonstrate the mass productioncapability of BiSb topological insulator for implementation of ultralow powerSOT-MRAM and other SOT-based spintronic devices.

Ultrahigh efficient spin-orbit torque magnetization switching in all-sputtered topological insulator - ferromagnet multilayers