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We demonstrate the measurement of p-channel silicon-on-insulator quantum dotsat liquid helium temperatures by using a radio frequency (rf) reflectometrycircuit comprising of two independently tunable GaAs varactors. Thisarrangement allows observing Coulomb diamonds at 4.2\,K under nearly bestmatching condition and optimal signal-to-noise ratio. We also discuss the rfleakage induced by the presence of the large top gate in MOS nanostructures andits consequence on the efficiency of rf-reflectometry. These results open theway to fast and sensitive readout in multi-gate architectures, includingmulti-qubit platforms.

4.2 K Sensitivity-Tunable Radio Frequency Reflectometry of a Physically Defined P-channel Silicon Quantum Dot