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This study represents the investigation of In 2 S 3  thin films as an electron transport layer in the CuBaSn(S, Se)-CBT(S, Se) solar cells, which have been deposited using the Chemical Spray Pyrolysis method. For studying the electrical properties of films such as conduction and valence band, carrier densities, Fermi level, flat band potential, and semiconductor type, the Mott–Schottky analysis has been used. UV–VIS, XRD, and FESEM have been applied to investigate the optical properties of the layers and the layer’s morphologies. The experimental CBT(S, Se) solar cell has been simulated and validated as the next step. After that, the In 2 S 3  layer has been used as the electron transport layer. The results represent that the In 2 S 3  layer is a suitable substitution for toxic CdS. Finally, the In 2 S 3  properties are varied in reasonable ranges, which means different electron transport layers are screened.

A modeling study on utilizing low temperature sprayed In2S3 as the buffer layer of CuBaSn(S, Se) solar cells