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We report on a giant persistent photoconductivity (PPC) inducedsemiconductor-to-conductor like transition in zinc-tin-oxide (ZTO)photo-thinfilm transistors (TFT). The active ZTO channel layer was prepared byremote-plasma reactive sputtering and possesses an amorphous structure. Undersubbandgap excitation of ZTO with UV light, the photocurrent reaches as high as~10 -4 A (a photo-to-dark current ratio of ~10 7) and remains close to thishigh value after switching off the light. During this time, the ZTO TFTexhibits gigantic PPC with long-lasting recovery time, which leads the ZTOcompound to undergo a semiconductor-to-conductor like transition. In thepresent case, the conductivity changes over six orders of magnitude, from ~10-7to 0.92 {\Omega} -1cm-1. After UV exposure, the ZTO compound can potentiallyremain in the conducting state for up to a month. The underlying physics of theobserved PPC effect is investigated by studying defects (deep-states andtail-states) by employing a discharge current analysis (DCA) technique.Findings from the DCA study reveal direct evidence for the involvement ofsub-gap tail-states of the ZTO in the giant PPC, while deep-states contributeto mild PPC.

Tail-states induced semiconductor-toconductor like transition under sub-bandgap light excitation in the zinc-tin-oxide photothinfilm transistors