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Disorder induced phase slip (PS) events appearing in the current voltagecharacteristics (IVCs) are reported for two-dimensional TiN thin films producedby a robust substrate mediated nitridation technique. Here, high temperatureannealing of Ti/Si3N4 based metal/substrate assembly is the key to producemajority phase TiN accompanied by TiSi2 and elemental Si as minority phases.The method itself introduces different level of disorder intrinsically bytuning the amount of the non-superconducting minority phases that arecontrolled by annealing temperature (Ta) and the film thickness. Thesuperconducting critical temperature (Tc) strongly depends on Ta and themaximum Tc obtained from the demonstrated technique is about 4.8 K for thethickness range of about 12 nm and above. Besides, the dynamics of IVCs getmodulated by the appearance of intermediated resistive steps for decreased Taand the steps get more prominent for reduced thickness. Further, the deviationin the temperature dependent critical current (Ic) from the Ginzburg-Landautheoretical limit varies strongly with the thickness. Finally, the Tc,intermediate resistive steps in the IVCs and the depairing current are observedto alter in a similar fashion with Ta and the thickness indicating therobustness of the synthesis process to fabricate disordered nitride-basedsuperconductor.

A Robust nitridation technique for fabrication of disordered superconducting TiN thin films featuring phase slip events