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Spin transport property of polarization induced two-dimensional electron gaschannel formed in the central vertical plane of a wedge-shaped\textit{c}-oriented GaN nanowall is investigated theoretically. Since theconfining potential preserves the spatial symmetry between the conduction andvalence band, the Rashba effect is suppressed in this system even when theshape of the wedge is asymmetric. It has been found that the relaxation of theelectron spin oriented along the direction of the confinement viaD'yakonov-Perel' (DP) mechanism, which is the dominant process of relaxation inthis high mobility channel, is entirely switched off at low temperatures. Spinrelaxation can be turned on by applying a suitable bias at the gate. Exploitingthis remarkable effect, a novel all electrically driven spin-transistor hasbeen proposed.

Spin transport in polarization induced two dimensional confinement of carriers in wedge shaped \textit{c}-GaN nanowalls