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The emergence of ferromagnetism in two-dimensional van der Waals materialshas aroused broad interest. However, the ferromagnetic instability has been aproblem remained. In this work, by using the first-principles calculations, weidentified the critical ranges of strain and doping for the bilayer Cr2Ge2Te6within which the ferromagnetic stability can be enhanced. Beyond the criticalrange, the tensile strain can induce the phase transition from theferromagnetic to the antiferromagnetic, and the direction of magnetic easy axiscan be converted from out-of-plane to in-plane due to the increase ofcompressive strain, or electrostatic doping. We also predicted an electrondoping range, within which the ferromagnetism can be enhanced, while theferromagnetic stability was maintained. Moreover, we found that the compressivestrain can reverse the spin polarization of electrons at the conduction bandminimum, so that two categories of half-metal can be induced by controllingelectrostatic doping in the bilayer Cr2Ge2Te6. These results should shed alight on achieving ferromagnetic stability for low-dimensional materials.

Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te6