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Cryogenic Atomic Layer Etching (cryo-ALE) of SiO 2  based on alternating a C 4 F 8  molecule physisorption step and an argon plasma step, has been enhanced thanks to a better understanding of the mechanism. First, we used Quadrupole Mass spectrometry (QMS) and spectroscopic ellipsometry analyses to evaluate the residence time of physisorbed C 4 F 8  molecules versus temperature and pressure on SiO 2  surface. QMS monitoring of the SiF 4  etching by-product also enabled to follow the self-limiting etching behavior. Finally, a SiO 2  cryo-ALE process was proposed at a temperature of − 90 °C resulting in a very linear etch over 150 cycles and an Etch amount Per Cycle as low as 0.13 nm/cycle.

Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption