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A novel nanocomposite-based non-volatile resistance switching random access memory device introducing single-walled carbon nanotube (SWCNT)@TiO 2  core–shell wires was proposed for flexible electronics. The SWCNT was de-bundled by ultrasonication with sodium dodecylbenzene sulfonate (SDBS), and then the TiO 2  skin layer on the SWCNT surface was successfully introduced by adding benzyl alcohol as a weak surfactant. The nanocomposite resistance switching layer was composed of the SWCNT@TiO 2  core–shell wires and poly(vinyl alcohol) (PVA) matrix by a simple spin-coating method. The device exhibited reproducible resistance switching performance with a remarkably narrow distribution of operating parameters (V SET  and V RESET  were 2.63 ± 0.16 and 0.95 ± 0.11 V, respectively) with a large R ON /R OFF  ratio of 10 5  for 200 consecutive switching cycles. Furthermore, the excellent resistance switching behavior in our device was maintained against mechanical stress up to 10 5  bending test. We believe that the nanocomposite memory device with SWCNT@TiO 2  core–shell wires would be a critical asset to realize practical application for a flexible non-volatile memory field.

Sustainable resistance switching performance from composite-type ReRAM device based on carbon Nanotube@Titania core–shell wires