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In monolayers of transition metal dichalcogenides the nonlocal nature of theeffective dielectric screening leads to large binding energies of excitons.Additional lateral confinement gives rise to exciton localization in quantumdots. By assuming parabolic confinement for both the electron and the hole, wederive model wave functions for the relative and the center-of-mass motions ofelectron-hole pairs, and investigate theoretically resonant energy transferamong excitons localized in two neighboring quantum dots. We quantify theprobability of energy transfer for a direct-gap transition by assuming that theinteraction between two quantum dots is described by a Coulomb potential, whichallows us to include all relevant multipole terms of the interaction. Wedemonstrate the structural control of the valley-selective energy transferbetween quantum dots.

Valley-selective energy transfer between quantum dots in atomically thin semiconductors