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Strontium bismuth tantalate vanadate [SrBi 2 (Ta 2−x V x )O 9 , SBTV] ceramics, which are bismuth-layered perovskite ferroelectrics, were synthesized through the solid-state reaction method. The effects of different sintering temperatures and V 2 O 5  contents on the structure of the microstructure, Raman spectrum, and dielectric properties of the SBTV ceramics were investigated. As sintered at high temperature (980–1040 °C) and different V 2 O 5  contents (x = 0.1 − x = 0.4), only disk-like grains of the SBTV ceramics were observed in the scanning electron micrographs. Preferential orientation of the crystals of the SBTV ceramics was confirmed through X-ray diffraction studies. The higher dielectric constant and Curie temperature of the SBTV ceramics compared with those of strontium bismuth tantalite (SrBi 2 Ta 2 O 9 , SBT) ceramics are ascribe to the partial replace of Ta 5+  ions by V 5+  ions in the B sites. The Curie–Weiss law and the modified Curie–Weiss law were used to discuss the normal-type or relaxor-type ferroelectric characteristic of the SBTV ceramics. The Ta 5+  ion replaced by V 5+  ion site in SBT ceramics to form SBTV ceramics exerted a pronounced effect on the BO 6  mode, as demonstrated by Raman spectrum results.

Effect of V2O5 B-site substitution on the microstructure, Raman spectrum, and dielectric properties of SrBi2Ta2O9 ceramics