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The increasing demand for high-density data storage leads to an increasinginterest in novel memory concepts with high scalability and the opportunity ofstoring multiple bits in one cell. A promising candidate is the redox-basedresistive switch repositing the information in form of different resistancestates. For reliable programming, the underlying physical parameters need to beunderstood. We reveal that the programmable resistance states are linked tointernal series resistances and the fundamental nonlinear switching kinetics.The switching kinetics of Ta$_{2}$O$_{5}$-based cells was investigated in awide range over 15 orders of magnitude from 250 ps to 10$^{5}$ s. We foundstrong evidence for a switching speed of 10 ps which is consistent with analogelectronic circuit simulations. On all time scales, multi-bit data storagecapabilities were demonstrated. The elucidated link between fundamentalmaterial properties and multi-bit data storage paves the way for designingresistive switches for memory and neuromorphic applications.

Picosecond Multilevel Resistive Switching in Tantalum Oxide Thin Films