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Halide vacancy defect is one of the major origins of non-radiative recombination in the lead halide perovskite light emitting devices (LEDs). Hence the defect passivation is highly demanded for the high-performance perovskite LEDs. Here, we demonstrated that FA doping led to the enrichment of Br in Cs 1− x  FA  x  PbBr 3  QDs. Due to the defect passivation by the enriched Br, the trap density in Cs 1− x  FA  x  PbBr 3  significantly decreased after FA doping, and which improved the optical properties of Cs 1− x  FA  x  PbBr 3  QDs and their QD-LEDs. PLQY of Cs 1– x  FA  x  PbBr 3  QDs increased from 76.8% ( x  = 0) to 85.1% ( x  = 0.04), and L  max   and CE  max   of Cs 1– x  FA  x  PbBr 3  QD-LEDs were improved from L  max   = 2880 cd m −2  and CE  max   = 1.98 cd A −1  ( x  = 0) to L  max   = 5200 cd m −2  and CE  max   = 3.87 cd A −1  ( x  = 0.04). Cs 1– x  FA  x  PbBr 3  QD-LED device structure was optimized by using PVK as a HTL and ZnO modified with b-PEI as an ETL. The energy band diagram of Cs 1– x  FA  x  PbBr 3  QD-LEDs deduced by UPS analyses.

Self-defect-passivation by Br-enrichment in FA-doped Cs1−xFAxPbBr3 quantum dots: towards high-performance quantum dot light-emitting diodes