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As part of a program to investigate the materials for resistive random access memory (ReRam) applications, a study has been conducted using embedded manganese oxysulfide (MOS) nanoparticles on the thin film of carbon nitride (CN). A high-temperature in-situ route was employed to synthesis CN-MOS composite where thiourea and manganese chloride was used as the precursor. The electrical property of the CN-MOS composite system (active layer), sandwiched between two gold electrodes, was measured under different sweeping (voltage) conditions. The device displayed different types of switching patterns, unipolar, and bipolar, by changing the sweep direction. The CN-MOS based device also exhibited good endurance and memory retention performances for the period of 10 4  cycles and 10 4  s, respectively, for both the polarities.

Resistive switching characteristics of carbon nitride supported manganese oxysulfide: an evidence for the sweep dependent transformation of polarity