English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Our density functional theory calculations show that tiny-gap semiconductor SiGe monolayer is a quantum valley Hall insulator with a spontaneous electric polarization and, under a small biaxial strain, undergoes a topological phase transition between the states with opposite valley Chern numbers. The topological phase transition entails abrupt inversion of the in-plane electric polarization corresponding to inversion of the sublattice pseudospin polarization, while the out-of-plane electric polarization shows a linear response to the biaxial strain as well as to the perpendicular electric field regardless of the phase transition. Thus, the quantum valley Hall state entails in-plane ferroelectricity corresponding to a sublattice pseudospin ferromagnetism.

Strain-induced topological phase transition with inversion of the in-plane electric polarization in tiny-gap semiconductor SiGe monolayer