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Taking advantage of the Magnetoelectric (ME) and its inverse effect, thisarticle demonstrates strain-mediated magnetoelectric write and read operationssimultaneously in Co60Fe20B20/ Pb(Mg1/3Nb2/3)0.7Ti0.3O3 heterostructureswithout using any symmetry breaking magnetic field at room temperature. Byapplying an external DC-voltage across a (011)-cut PMN-PT substrate, theferroelectric polarization is re-oriented, which results in an anisotropicin-plane strain that transfers to the CoFeB thin film and changes its magneticanisotropy Hk. The change in Hk in-turn results in a 90o rotation of themagnetic easy axis for sufficiently high voltages. Simultaneously, the inverseeffect is employed to read changes of the magnetic properties. Because thePiezoelectric (PE)/FerroMagnetic (FM) system is fully coupled, the change ofmagnetization in FM induces an elastic stress in the PE layer, which generatesa piezoelectric potential in the system that can be used to readout themagnetic state of the FM layer. Our experimental results are in excellentqualitative agreement with a recently proposed, experimentally benchmarkedequivalent circuit model that considers how magnetic properties areelectrically controlled in such ME/PE heterostructure and how a back-voltage isgenerated due to changing magnetic properties in a self-consistent model.

Demonstration of a strain-mediated magnetoelectric write and read unit in a Co60Fe20B20/ Pb(Mg1/3Nb2/3)0.7Ti0.3O3 heterostructure