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Spin chiral systems with Dzyaloshinskii–Moriya ( DM ) interaction due to broken inversion symmetry are extensively studied for their technological applications in spintronics and thermoelectrics. Here, we report an experimental study on the magnetization, magnetoresistance ( MR ) and electronic structure of a non-centrosymmetric compound CrSi with B20 crystal structure. Both magnetization and  MR  shows competing ferromagnetic ( FM ) and antiferromagnetic ( AFM ) correlations with the  FM  correlations being comparatively weaker indicating the presence of  DM  interaction in CrSi. A large positive  MR\documentclass[12pt]{minimal} 				\usepackage{amsmath} 				\usepackage{wasysym}  				\usepackage{amsfonts}  				\usepackage{amssymb}  				\usepackage{amsbsy} 				\usepackage{mathrsfs} 				\usepackage{upgreek} 				\setlength{\oddsidemargin}{-69pt} 				\begin{document}$$\sim \,25\%$$\end{document}    ∼    25  %obtained at 5 K and 5 T magnetic field arises due to the stronger  AFM  correlations. Resonant photoemission shows both localized and itinerant nature of Cr 3 d  electrons to be present in CrSi and this is supported by the temperature dependence of magnetic susceptibility. Drastic variation in the density of states along with valence band broadening at low temperature indicates the increase in hybridization between Cr 3 d  and Si 3 s –3 p  states which enhances the localization effects. Spin polarized itinerant Cr 3 d  electrons give rise to  AFM  spin density wave in CrSi. Magnetic interaction between the localized and itinerant Cr 3 d  electrons are found to be crucial for realizing DM interaction in this system. Spectral density of states derived from high resolution valence band measurements provides evidence of electronic topological transition in CrSi. Large density of polarized itinerant electrons which varies with temperature and the large positive  MR  with  AFM  correlations suggests CrSi as a potential candidate for both the thermoelectric and spintronics applications.

Large positive magnetoresistance and Dzyaloshinskii–Moriya interaction in CrSi driven by Cr 3d localization