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The formation of hydrogen blisters in the fabrication of tunnelling oxide passivating contact (TOPCon) solar cells critically degrades passivation. In this study, we investigated the formation mechanism of blisters during the fabrication of TOPCons for crystalline silicon solar cells and the suppression of such blisters. We tested the effects of annealing temperature and duration, surface roughness, and deposition temperature on the blister formation, which was suppressed in two ways. First, TOPCon fabrication on a rough surface enhanced adhesion force, resulting in reduced blister formation after thermal annealing. Second, deposition or annealing at higher temperatures resulted in the reduction of hydrogen in the film. A sample fabricated through low-pressure chemical vapor deposition at 580 °C was free from silicon–hydrogen bonds and blisters after the TOPCon structure was annealed. Remarkably, samples after plasma-enhanced chemical vapor deposition at 300, 370, and 450 °C were already blistered in the as-deposited state, despite low hydrogen contents. Analysis of the hydrogen incorporation, microstructure, and deposition mechanism indicate that in plasma-enhanced chemical vapor deposition (PECVD) deposition, although the increase of substrate temperature reduces the hydrogen content, it risks the increase of porosity and molecular-hydrogen trapping, resulting in even more severe blistering.

Formation and suppression of hydrogen blisters in tunnelling oxide passivating contact for crystalline silicon solar cells