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Solid-state quantum coherent devices are quickly progressing. Superconductingcircuits, for instance, have already been used to demonstrate prototype quantumprocessors comprising a few tens of quantum bits. This development alsorevealed that a major part of decoherence and energy loss in such devicesoriginates from a bath of parasitic material defects. However, neither themicroscopic structure of defects nor the mechanisms by which they emerge duringsample fabrication are understood. Here, we present a technique to obtaininformation on locations of defects relative to the thin film edge of the qubitcircuit. Resonance frequencies of defects are tuned by exposing the qubitsample to electric fields generated by electrodes surrounding the chip. Bydetermining the defect's coupling strength to each electrode and comparing itto a simulation of the field distribution, we obtain the probability at whichlocation and at which interface the defect resides. This method is applicableto already existing samples of various qubit types, without further on-chipdesign changes. It provides a valuable tool for improving the material qualityand nano-fabrication procedures towards more coherent quantum circuits.

Resolving the positions of defects in superconducting quantum bits