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One of the hallmarks of topological insulators (TIs), the intrinsic spin polarisation in the topologically protected surface states, is investigated at room temperature  in-situ  by means of four-probe scanning tunnelling microscopy (STM) for a BiSbTe 3  thin film. To achieve the required precision of tip positions for measuring a spin signal, a precise positioning method employing STM scans of the local topography with each individual tip is demonstrated. From the transport measurements, the spin polarisation in the topological surface states (TSS) is estimated as  p  ~ 0.3 – 0.6, which is close to the theoretical limit.

Room temperature in-situ measurement of the spin voltage of a BiSbTe3 thin film