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Wurtzite AlN film is a promising material for deep ultraviolet light-emitting diodes. However, some properties that attribute to its crystal orientation,  i.e .,  c -axis orientation, are obstacles in realizing high efficiency devices. Constructing devices with non- c -axis oriented films is a solution to this problem; however, achieving it with conventional growth techniques is difficult. Recently, we succeeded in growing  a -axis oriented wurtzite heavily Fe-doped AlN (AlFeN) films  via  sputtering. In this article, we report the electronic structures of AlFeN films investigated using soft X-ray spectroscopies. As-grown films were found to have conduction and valence band structures for a film with  c -axis in film planes. Simultaneously, it was found that large gap states were formed  via  N- p  and Fe- d  hybridization. To remove the gap states, the films were annealed, thereby resulting in a drastic decrease of the gap states while maintaining  a -axis orientation. We offer heavy Fe-doping and post annealing as a new technique to obtain non-polar AlN films.

Electronic structure of AlFeN films exhibiting crystallographic orientation change from c- to a-axis with Fe concentrations and annealing effect