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Herein, we have investigated the tunability of the photoluminescence (PL) of the monolayer MoS 2  (1L-MoS 2 ) by decorating it with WS 2  quantum dots (WS 2  QD). The direct bandgap 1L-MoS 2  and WS 2  QDs are grown by chemical vapor deposition and liquid exfoliation methods, respectively. The room temperature PL spectrum of bare 1L-MoS 2  is systematically quenched with its decoration with WS 2  QDs at different concentrations. A decrease in the work function of 1L-MoS 2  with the decoration of WS 2  QDs was established from the Kelvin probe force microscopy analysis. A detailed quantitative analysis using the four-energy level model involving coupled charge transfer was employed to explain the redshift and the systematic decrease in the intensity of the PL peak in 1L-MoS 2 /WS 2  QD heterostructure. The modulation of the PL in the heterostructure is attributed to the increase in the formation of negative trions through the charge transfer from WS 2  QD to the 1L-MoS 2  and thus making the 1L-MoS 2  heavily n-type doped, with increase in the electron density by ~1.5 × 10 13  cm −2 . This study establishes the contribution of defects in the coupled charge transfer dynamics in 1L-MoS 2 , and it lays out a convenient strategy to manipulate the optical and electrical properties of 1L-MoS 2  for various optoelectronic applications.

Coupled Charge Transfer Dynamics and Photoluminescence Quenching in Monolayer MoS2 Decorated with WS2 Quantum Dots