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AgInTe 2  compound has not received enough recognition in thermoelectrics, possibly due to the fact that the presence of Te vacancy (V Te ) and antisite defect of In at Ag site (In Ag ) degrades its electrical conductivity. In this work, we prepared the Ag 1- x  InTe 2  compounds with substoichiometric amounts of Ag and observed an ultralow lattice thermal conductivity ( κ  L  = 0.1 Wm −1 K −1 ) for the sample at  x  = 0.15 and 814 K. This leads to more than 2-fold enhancement in the ZT value (ZT = 0.62) compared to the pristine AgInTe 2 . In addition, we have traced the origin of the untralow  κ  L  using the Callaway model. The results attained in this work suggest that the engineering of the silver vacancy (V Ag ) concentration is still an effective way to manipulate the thermoelectric performance of AgInTe 2 , realized by the increased point defects and modified crystal structure distortion as the V Ag  concentration increases.

Silver vacancy concentration engineering leading to the ultralow lattice thermal conductivity and improved thermoelectric performance of Ag1-xInTe2