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We studied the effect of second-order magnetic anisotropy on the linear conductance output of magnetic tunnel junctions (MTJs) for magnetic-field-sensor applications. Experimentally, CoFeB/MgO/CoFeB-based MTJs were fabricated, and the nonlinearity, NL was evaluated for different thicknesses,  t  of the CoFeB free layer from the conductance. As increasing  t  from 1.5 to 2.0 nm, maximum NL, NL max  was found to decrease from 1.86 to 0.17% within the dynamic range,  H  d  = 1.0 kOe. For understanding the origin of such NL behavior, a theoretical model based on the Slonczewski model was constructed, wherein the NL was demonstrated to be dependent on both the normalized second-order magnetic anisotropy field of  H  k2 /| H  k  eff | and the normalized dynamic range of  H  d /| H  k  eff |. Here,  H  k  eff ,  H  k2 , are the effective and second-order magnetic anisotropy field of the free layer in MTJ. Remarkably, experimental NL max  plotted as a function of  H  k2 /| H  k  eff | and  H  d /| H  k  eff |, which were measured from FMR technique coincided with the predictions of our model. Based on these experiment and calculation, we conclude that  H  k2  is the origin of NL and strongly influences its magnitude. This finding gives us a guideline for understanding NL and pioneers a new prospective for linear-output MTJ sensors to control sensing properties by  H  k2 .

Effect of second-order magnetic anisotropy on nonlinearity of conductance in CoFeB/MgO/CoFeB magnetic tunnel junction for magnetic sensor devices