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Two-dimensional MoS2 has emerged as promising material for nanoelectronicsand spintronics due to its exotic properties. However, high contact resistanceat metal semiconductor MoS2 interface still remains an open issue. Here, wereport electronic properties of field effect transistor devices using monolayerMoS2 channels and permalloy (Py) as ferromagnetic (FM) metal contacts.Monolayer MoS2 channels were directly grown on SiO2/Si substrate via chemicalvapor deposition technique. The increase in current with back gate voltageshows the tunability of FET characteristics. The Schottky barrier height (SBH)estimated for Py/MoS2 contacts is found to be +28.8 meV (zero-bias), which isthe smallest value reported so-far for any direct metal (magnetic ornon-magnetic)/monolayer MoS2 contact. With the application of gate voltage (+10V), SBH shows a drastic reduction down to a value of -6.8 meV. The negative SBHreveals ohmic behavior of Py/MoS2 contacts. Low SBH with controlled ohmicnature of FM contacts is a primary requirement for MoS2 based spintronics andtherefore using directly grown MoS2 channels in the present study can pave apath towards high performance devices for large scale applications.

Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts