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Near-infrared sensitization of monolayer MoS 2  is here achieved  via  the covalent attachment of a novel heteroleptic nickel  bis -dithiolene complex into sulfur vacancies in the MoS 2  structure. Photocurrent action spectroscopy of the sensitized films reveals a discreet contribution from the sensitizer dye centred around 1300 nm (0.95 eV), well below the bandgap of MoS 2  (2.1 eV), corresponding to the excitation of the monoanionic dithiolene complex. A mechanism of conductivity enhancement is proposed based on a photo-induced flattening of the corrugated energy landscape present at sulfur vacancy defect sites within the MoS 2  due to a dipole change within the dye molecule upon photoexcitation. This method of sensitization might be readily extended to other functional molecules that can impart a change to the dielectric environment at the MoS 2  surface under stimulation, thereby extending the breadth of detector applications for MoS 2  and other transition metal dichalcogenides.

Potential modulations in flatland: near-infrared sensitization of MoS2 phototransistors by a solvatochromic dye directly tethered to sulfur vacancies