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Tunable photonic circuits were demonstrated in the mid-Infrared (mid-IR) regime using integrated TiO 2 -on-LiNbO 3  (ToL) waveguides. The upper waveguide ridge was made by a sputtered TiO 2  thin film with broad transparency at λ = 0.4–8 µm and an optimized refractive index  n  = 2.39. The waveguide substrate is a z-cut single crystalline LiNbO 3  (LN) wafer that has strong Pockels effect, thus enabling the tunability of the device through electro-optical (E-O) modulation. A sharp waveguide mode was obtained at λ = 2.5 µm without scattering or mode distortion found. The measured E-O coefficient  γ   eff   was 5.9 pm/V approaching  γ   31   of 8.6 pm/V of LN. The ToL waveguide showed a hybrid mode profile where its optical field can be modified by adjusting the TiO 2  ridge height. Our monolithically integrated ToL modulator is an efficient and small footprint optical switch critical for the development of reconfigurable photonic chips.

Mid-Infrared Electro-Optical Modulation Using Monolithically Integrated Titanium Dioxide on Lithium Niobate Optical Waveguides