English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

The potential applications of perovskite manganite R 1-x A x MnO 3  (R = rare earth element; A = Sr, Ca) thin films have been continuously explored due to their multi-functional properties. In particular, the optimally hole-doped La 0.67 Ca 0.33 MnO 3  thin film demonstrates a colossal magneto-resistance that is beneficial to the performance of spintronic devices. To understand the effect of R and A ions on the material properties, we systematically measure the resistivity, magnetization, and electronic energy states for three optimally hole-doped R 0.67 A 0.33 MnO 3  thin films with R = La, Sm and A = Sr, Ca. Various energy parameters are derived based on the X-ray absorption and X-ray photoelectron spectra, including the band gap, the charge frustration energy and the magnetic exchange energy. It is interesting to find that the replacement of La with Sm is more effective than that of Sr with Ca in terms of tuning the electrical property, the Curie temperature, and the band gap. The strain-induced reduction of the O 2 p - Mn 3 d  hybridization and the interplay of R/A site disorder and strain effect are discussed. The results of this study provide useful information for the band design of perovskite oxide films.

Atomic replacement effects on the band structure of doped perovskite thin films