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We investigate the oxygen conduction mechanism in a garnet-type oxide, Ca 3 Fe 2 Ge 3 O 12 , for the first time in detail by first-principle calculations. The nudged elastic band results confirm that this oxide has a lower migration barrier energy (0.45 eV) for an oxygen interstitial (O  i  ) with the kick-out mechanism than that (0.76 eV) for an oxygen vacancy. The migration paths for O  i   are delocalized and connected to the neighboring cells in three-dimensional space. This oxide does not have a very low formation energy of O  i   when the Fermi level is near the lowest unoccupied molecular orbital at a high temperature, which implies the possibility of electron doping by high-valence cations. These theoretical results suggest that the doping of Ca 3 Fe 2 Ge 3 O 12  for generation of excess O  i   provides a good oxygen-ion conductivity, along with the electronic conductivity.

Oxygen conduction mechanism in Ca3Fe2Ge3O12 garnet-type oxide