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The development of Si-compatible active photonic devices is a high priorityin computer and modern electronics industry. Ge is compatible with Si and is apromising light emission material. Nearly all Ge-on-Si materials reported sofar were grown using toxic precursor gases. Here we demonstrate the creation ofGe films on Si substrates through physical vapor deposition of toxin-free solidGe sources. Structural characterization indicates that a high tensile strain isintroduced in the Ge film during the deposition process. We attribute thepresence of such a tensile strain to the difference in thermal expansioncoefficient between Si and Ge. A Ge peak, centered at ~2100 nm, is evident inthe photoluminescence spectra of these materials, which might result fromdirect band gap photoluminescence alone, or from superposition of direct bandgap and indirect band gap photoluminescence. These Ge-on-Si materials aretherefore promising in light emission applications.

Tensilely Strained Ge Films on Si Substrates Created by Physical Vapor Deposition of Solid Sources