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In this paper, we demonstrate that angstrom thick single atomic layer deposited (ALD) ZnO passivation can significantly improve the photoelectrochemical (PEC) activity of hydrothermally grown TiO 2  NWs. It is found that this ultrathin ZnO coating can passivate the TiO 2  surface defect states without hampering the carrier’s transfer dynamics. Moreover, a substantial improvement can be acquired by changing the deposition temperature of the ZnO layer (80 °C, and 250 °C) and named as 80 °C TiO 2 -ZnO, and 250 °C TiO 2 -ZnO. It was found that the deposition of this single layer in lower temperatures can lead to higher PEC activity compared to that deposited in higher ones. As a result of our PEC characterizations, it is proved that photoconversion efficiency of bare TiO 2  NWs can be improved by a factor of 1.5 upon coating it with a single ZnO layer at 80 °C. Moreover, considering the fact that this layer is a passivating coating rather than a continuous layer, it also keeps the PEC stability of the design while this feature cannot be obtained in a thick shell layer case. This paper proposes a bottom up approach to control the electron transfer dynamics in a heterojunction design and it can be applied to other metal oxide combinations.

scientific reports

Angstrom Thick ZnO Passivation Layer to Improve the Photoelectrochemical Water Splitting Performance of a TiO2 Nanowire Photoanode: The Role of Deposition Temperature