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To improve the performance of electronic devices, extensive research efforts have recently focused on the effect of incorporating Sn into Ge. In the present work, we investigate how Sn composition  x  (0 ≤  x  ≤ 0.12) and deposition temperature  T  d  (50 ≤  T  d  ≤ 200 °C) of the Ge 1− x  Sn  x   precursor affect subsequent solid-phase crystallization. Upon incorporating 3.2% Sn, which is slightly above the solubility limit of Sn in Ge, the crystal grain size increases and the grain-boundary barrier decreases, which increases the hole mobility from 80 to 250 cm 2 /V s. Furthermore, at  T  d  = 125 °C, the hole mobility reaches 380 cm 2 /V s, which is tentatively attributed to the formation of a dense amorphous GeSn precursor. This is the highest hole mobility for semiconductor thin films on insulators formed below 500 °C. These results thus demonstrate the usefulness of Sn doping of polycrystalline Ge and the importance of temperature while incorporating Sn. These findings make it possible to fabricate advanced Ge-based devices including high-speed thin-film transistors.

Improving carrier mobility of polycrystalline Ge by Sn doping