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Since the advent of graphene, a variety of studies have been performed toelucidate its fundamental physics, or to explore its practical applications.Gate-tunable resistance is one of the most important properties of graphene andhas been studied in 1-3 layer graphene in a number of efforts to control theband gap to obtain a large on-off ratio. On the other hand, the transportproperty of multilayer graphene with more than three layers is less wellunderstood. Here we show a new aspect of multilayer graphene. We found thatfour-layer graphene shows intrinsic peak structures in the gate voltagedependence of its resistance at zero magnetic field. Measurement of quantumoscillations in magnetic field confirmed that the peaks originate from thespecific band structure of graphene and appear at the carrier density for thebottoms of conduction bands and valence bands. The intrinsic peak structuresshould generally be observed in AB-stacked multilayer graphene. The presentresults would be significant for understanding the physics of graphene andmaking graphene FET devices.

Multilayer graphene shows intrinsic resistance peaks in the carrier density dependence