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The grain boundaries in superconducting MgB 2  are known to form effective magnetic flux pinning sites and, consequently, bulk MgB 2  containing a fine-grain microstructure fabricated from nanoscale Mg and B precursor powders exhibits good magnetic field-trapping performance below 20 K. We report here that the trapped field of MgB 2  bulk superconductors fabricated by an infiltration and growth process to yield a dense, pore-free microstructure, can be enhanced significantly by carbon-doping, which increases intra-band scattering within the superconducting grains. A maximum trapped field of 4.15 T has been measured at 7.5 K at the centre of a five-sample stack of Mg(B 1− xi  C  xi  ) 2  bulk superconductors processed by infiltration and growth, which not only represents a ~40% increase in trapped field observed compared to undoped bulk MgB 2 , but also is the highest trapped field reported to date in MgB 2  samples processed under ambient pressure. The trapped field is observed to decay at a rate of <2%/day at 10 K, which suggests that bulk MgB 2  superconductors fabricated using the infiltration and growth technique can be used potentially to generate stable, high magnetic fields for a variety of engineering applications.

High Trapped Fields in C-doped MgB2 Bulk Superconductors Fabricated by Infiltration and Growth Process