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We fabricated ambipolar field-effect transistors (FETs) from multi-layeredtriclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si.In contrast to previous reports on thin layers (~2 to 3 layers), we extractfield-effect carrier mobilities in excess of 10^2 cm^2/Vs at room temperaturein crystals with nearly ~10 atomic layers. These thicker FETs also show nearlyzero threshold gate voltage for conduction and high ON to OFF current ratioswhen compared to the FETs built from thinner layers. We also demonstrate thatit is possible to utilize this ambipolarity to fabricate logical elements ordigital synthesizers. For instance, we demonstrate that one can produce simple,gate-voltage tunable phase modulators with the ability to shift the phase ofthe input signal by either 90^o or nearly 180^o. Given that it is possible toengineer these same elements with improved architectures, for example on h-BNin order to decrease the threshold gate voltage and increase the carriermobilities, it is possible to improve their characteristics in order toengineer ultra-thin layered logic elements based on ReSe2.

Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors