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Using first-principle calculations, we demonstrate several approaches tomanipulate Dzyaloshinskii-Moriya Interaction (DMI) in ultrathin magnetic films.First, we find that DMI is significantly enhanced when the ferromagnetic (FM)layer is sandwiched between nonmagnetic (NM) layers inducing additive DMI inNM/FM/NM structures. For instance, as Pt and Ir below Co induce DMI of oppositechirality, inserting Co between Pt (below) and Ir (above) in Ir/Co/Pt trilayersenhances the DMI of Co/Pt bilayers by 15\%. Furthermore, in case of Pb/Co/Pttrilayers (Ir/Fe/Co/Pt multilayers), DMI can be enhanced by 50\% (almostdoubled) compared to Co/Pt bilayers reaching a very large DMI amplitude of 2.7(3.2) meV/atom. Our second approach for enhancing DMI is to use oxide cappinglayer. We show that DMI is enhanced by 60\% in Oxide/Co/Pt structures comparedto Co/Pt bilayers. Moreover, we unveiled the DMI mechanism at Oxide/Co inerfacedue to interfacial electric field effect, which is different to Fert-Levy DMIat FM/NM interfaces. Finally, we demonstrate that DMI amplitude can bemodulated using an electric field with efficiency factor comparable to that ofthe electric field control of perpendicular magnetic anisotropy in transitionmetal/oxide interfaces. These approaches of DMI controlling pave the way forskyrmions and domain wall motion-based spintronic applications.

Controlling Dzyaloshinskii-Moriya Interaction via Chirality Dependent Layer Stacking, Insulator Capping and Electric Field