English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

There is a great interest in phototransistors based on transition metal dichalcogenides because of their interesting optoelectronic properties. However, most emphasis has been put on MoS 2  and little attention has been given to MoSe 2 , which has higher optical absorbance. Here, we present a compelling case for multilayer MoSe 2  phototransistors fabricated in a bottom-gate thin-film transistor configuration on SiO 2 /Si substrates. Under 650-nm-laser, our MoSe 2  phototransistor exhibited the best performance among MoSe 2  phototransistors in literature, including the highest responsivity (1.4 × 10 5  AW −1 ), the highest specific detectivity (5.5 × 10 13  jones), and the fastest response time (1.7 ms). We also present a qualitative model to describe the device operation based on the combination of photoconductive and photogating effects. These results demonstrate the feasibility of achieving high performance in multilayer MoSe 2  phototransistors, suggesting the possibility of further enhancement in the performance of MoSe 2  phototransistors with proper device engineering.

High-Responsivity Multilayer MoSe2 Phototransistors with Fast Response Time