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A small and narrow negative-magnetoresistance (MR) effect that appears about null magnetic field over the interval −0.025 ≤  B  ≤ 0.025  T  in magnetotransport studies of the GaAs/AlGaAs 2D system with  μ  ≈ 10 7  cm  2 / Vs  is experimentally examined as a function of the sample temperature,  T . The temperature dependent magnetoresistance data were fit using the Hikami  et al . theory, without including the spin-orbit correction, to extract the inelastic length,  l   i  , which decreases rapidly with increasing temperature. It turns out that  l   i   <  l   e  , where  l   e   is the elastic length, for all  T . Thus, we measured the single particle lifetime,  τ   s  , and the single particle mean free path  l   s   =  v   F   τ   s  . A comparison between  l   i   and  l   s   indicates that  l   i   >  l   s  . The results suggest that the observed small and narrow magnetoresistance effect about null magnetic field could be a manifestation of coherent backscattering due to small angle scattering from remote ionized donors in the high mobility GaAs/AlGaAs 2DES.

Coherent backscattering in quasi-ballistic ultra-high mobility GaAs/AlGaAs 2DES