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Here, we demonstrate the high electromechanical strain and enhanced temperature characteristics in the  c -axis-oriented lead-free (Na,Bi)TiO 3 –BaTiO 3  (NBT–BT) polycrystalline thin film prepared on Si substrates by rf magnetron sputtering. The effective transverse piezoelectric coefficient,  e  31  * , estimated from the electromechanical strain measured under high electric field, reaches a high level of −12.5 C/m 2 , and is comparable to those of conventional Pb(Zr,Ti)O 3  films.  In-situ  X-ray diffraction measurement and electron diffraction analysis revealed the electromechanical strain of the NBT–BT film to originate predominantly in elongation of the tetragonal ( P4bm ) crystal lattice in the  c -axis direction. In addition to the large  e  31  * , the NBT–BT film exhibits enhanced permittivity maximum temperature,  T  m , of ~400 °C and no depolarization below  T  m , as compared to bulk NBT–BT having  T  m  ≈ 300 °C and a depolarization temperature of ~100 °C. We conclude that the enhancement of temperature characteristics is associated with the distorted  P4bm  crystal lattice formed by deposition-induced stress and defects. We believe that the present study paves the way for practical applications of lead-free piezoelectric thin films in electromechanical devices.

High electromechanical strain and enhanced temperature characteristics in lead-free (Na,Bi)TiO3–BaTiO3 thin films on Si substrates