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We demonstrate a high-temperature nanoscale super-Schottky diode based on a superconducting tunnel junction of pulsed-laser-deposited YBCO on GaN thin films. A buffer-free direct growth of nanoscale YBCO thin films on heavily doped GaN was performed to realize a direct high-T c  superconductor-semiconductor junction. The junction shows strongly non-linear I-V characteristics, which have practical applications as a low-voltage super-Schottky diode for microwave mixing and detection. The V-shaped differential conductance spectra observed across the junction are characteristic of the  c -axis tunneling into a cuprate superconductor with a certain disorder level. This implementation of the super-Schottky diode, supported by the buffer-free direct growth of nanoscale high-T c  thin films on semiconductors, paves the way for practical large-scale fabrication and integration of high-T c -superconductor devices in future technologies.

Nanoscale High-Tc YBCO/GaN Super-Schottky Diode