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Photoluminescence measurements in mono- and bilayer-MoS 2  on SiO 2  were undertaken to determine the thermal effect of the MoS 2 /SiO 2  interface on the optical bandgap. The energy and intensity of the photoluminescence from monolayer MoS 2  were lower and weaker than those from bilayer MoS 2  at low temperatures, whilst the opposite was true at high temperatures above 200 K. Density functional theory calculations suggest that the observed optical bandgap crossover is caused by a weaker substrate coupling to the bilayer than to the monolayer.

Temperature induced crossing in the optical bandgap of mono and bilayer MoS2 on SiO2