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Cd3As2 has long been known as a high-mobility semiconductor. The recentfinding of a topological semimetal state in this compound has demanded growthof epitaxial films with high crystallinity and controlled thickness. Here wereport the structural characterisation of Cd3As2 films grown on SrTiO3substrates by solid-phase epitaxy at high temperatures up to 600 C by employingoptimised capping layers and substrates. The As triangular lattice isepitaxially stacked on the Ti square lattice of the (001) SrTiO3 substrate,producing (112)-oriented Cd3As2 films exhibiting high crystallinity with arocking-curve width of 0.02 and a high electron mobility exceeding 30,000cm2/Vs. The systematic characterisation of films annealed at varioustemperatures allowed us to identify two-step crystallisation processes in whichout-of-plane and subsequently in-plane directions occur with increasingannealing temperature. Our findings on the high-temperature crystallisationprocess of Cd3As2 enable a unique approach for fabricating high-quality Cd3As2films and elucidating quantum transport by back gating through the SrTiO3substrate.

Structural characterisation of high-mobility Cd3As2 films crystallised on SrTiO3