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A new perpendicular spin-transfer-torque magnetic-tunnel-junction (p-MTJ) spin-valve was developed to achieve a high tunneling magnetoresistance (TMR) ratio. It had a double MgO-based spin-valve structure with a top Co 2 Fe 6 B 2  free layer and incorporated a single SyAF [Co(0.4 nm)/Pt(0.3 nm)] 3  layer and a new buffer layer of Co(0.6)/Pt(0.3)/Co(0.4). It had a TMR ratio of 180% and anisotropy exchange field ( H   ex  ) of 3.44 kOe after  ex-situ  annealing of 350 °C for 30 min under a vacuum below 10 −6  torr and a perpendicular magnetic field of 3 tesla, thereby ensuring a memory margin and avoiding read disturbance failures. Its high level of performance was due to the face-center-cubic crystallinity of the MgO tunneling barrier being significantly improved by decreasing its surface roughness (i.e., peak-to-valley length of 1.4 nm).

Double MgO-based Perpendicular Magnetic-Tunnel-Junction Spin-valve Structure with a Top Co2Fe6B2 Free Layer using a Single SyAF [Co/Pt]n Layer