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The design, fabrication, and characterization of ultra-high responsivity photodetectors based on mesoscopic multilayer MoS 2  is presented, which is a less explored system compared to direct band gap monolayer MoS 2  that has received increasing attention in recent years. The device architecture is comprised of a metal-semiconductor-metal (MSM) photodetector, where Mo was used as the contact metal to suspended MoS 2  membranes. The photoresponsivity    \documentclass[12pt]{minimal} 				\usepackage{amsmath} 				\usepackage{wasysym}  				\usepackage{amsfonts}  				\usepackage{amssymb}  				\usepackage{amsbsy} 				\usepackage{mathrsfs} 				\usepackage{upgreek} 				\setlength{\oddsidemargin}{-69pt} 				\begin{document}$${\boldsymbol{R}}$$\end{document}   Rwas measured to be ~1.4 × 10 4  A/W, which is > 10 4  times higher compared to prior reports, while the detectivity  D*  was computed to be ~2.3 × 10 11  Jones at 300 K at an optical power  P  of ~14.5 pW and wavelength  λ  of ~700 nm. In addition, the dominant photocurrent mechanism was determined to be the photoconductive effect (PCE), while a contribution from the photogating effect was also noted from trap-states that yielded a wide spectral photoresponse from UV-to-IR (400 nm to 1100 nm) with an external quantum efficiency (EQE) ~10 4 . From time-resolved photocurrent measurements, a decay time  τ   d   ~ 2.5 ms at 300 K was measured from the falling edge of the photogenerated waveform after irradiating the device with a stream of incoming ON/OFF white light pulses.

scientific reports

Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts