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The crystal grain size of CH 3 NH 3 PbI 3  (MAPbI 3 ) organic-inorganic hybrid perovskite (OHP) film was controllable in the range from ~60 nm to ~600 nm by non-solvents inter-diffusion controlled crystallization process in dripping crystallization method for the formation of perovskite film. The MAPbI 3  OHP non-volatile resistive random access memory with ~60 nm crystal grain size exhibited >0.1 TB/in 2  storage capacity, >600 cycles endurance, >10 4  s data retention time, ~0.7 V set, and ~−0.61 V re-set bias voltage.

Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory