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We have grown the MoAs$_2$ single crystal which crystallizes in a monoclinicstructure with C2/m space group. Transport measurements show that MoAs$_2$displays a metallic behavior at zero field and undergoes ametal-to-semiconductor crossover at low temperatures when the applied magneticfield is over 5 T. A robust resistivity plateau appears below 18 K and persistsfor the field up to 9 T. A large positive magnetoresistance (MR), reachingabout 2600\% at 2 K and 9 T, is observed when the field is perpendicular to thecurrent.The MR becomes negative below 40 K when the field is rotated to beparallel to the current. The Hall resistivity shows the non-linearfield-dependence below 70 K. The analysis using two-band model indicates acompensated electron-hole carrier density at low temperatures. A combination ofthe breakdown of Kohler's rule, the abnormal drop and the cross point in Halldata implies that a possible Lifshitz transition has occurred between 30 K and60 K, likely driving the compensated electron-hole density, the large MR aswell as the metal-semiconductor transition in MoAs$_2$. Our results indicatethat the family of centrosymmetric transition-metal dipnictides has richtransport behavior which can in general exhibit variable metallic andtopological features.

Magnetoresistance and robust resistivity plateau in MoAs2