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Depositing a barrier film for moisture protection without damage at a low temperature is one of the most important steps for organic-based electronic devices. In this study, the authors investigated depositing thin, high-quality SiN x  film on organic-based electronic devices, specifically, very high-frequency (162 MHz) plasma-enhanced chemical vapor deposition (VHF-PECVD) using a multi-tile push-pull plasma source with a gas mixture of NH 3 /SiH 4  at a low temperature of 80 °C. The thin deposited SiN x  film exhibited excellent properties in the stoichiometry, chemical bonding, stress, and step coverage. Thin film quality and plasma damage were investigated by the water vapor transmission rate (WVTR) and by electrical characteristics of organic light-emitting diode (OLED) devices deposited with SiN x , respectively. The thin deposited SiN x  film exhibited a low WVTR of 4.39 × 10 −4  g (m 2  · day) −1  for a single thin (430 nm thick) film SiN x  and the electrical characteristics of OLED devices before and after the thin SiN x  film deposition on the devices did not change, which indicated no electrical damage during the deposition of SiN x  on the OLED device.

Silicon Nitride Deposition for Flexible Organic Electronic Devices by VHF (162 MHz)-PECVD Using a Multi-Tile Push-Pull Plasma Source